Na - doped model shows the character of p - type semiconductor , and ni - doped model is n - type semiconductor 摻na后材料具有p型半導體的特性,而摻ni后則具有n型半導體的特性。
With doped ni element , the material converted into n - type semiconductor , what ' s more it has very low seebeck coefficient which shows ni is + 4 in this material 摻入一定量的ni后,轉變為n型半導體材料,它的seebeck系數非常小,表明ni在這個化合物中的表觀化學價的+ 4價。
With the prolongation of the annealing time at 400 " c and sokpa , the energy gap and the electrical resistivity increase and all the thin films trend to n - type semiconductors 400 、 80kpa硫化時,薄膜均呈n型導電特性,而且隨著硫化時間的延長,薄膜禁帶寬度及電阻率增大。
Xrd reveals a mixture structure of the face - centered cubic and hexagonal close - packed phases . the sn doped makes the electrical conductivity change from insulator to n - type semiconductor 用共蒸發法制備摻錫的c60薄膜,發現摻入的sn原子的薄膜導電性由原來的絕緣體變為n型半導體。
Tem micrographies show that tioj nanoparticles are partly coated with the polymer . we alse study effect of pani film . finally a new organic polymer stk junction i s produced by using p - type polyaniline and n - type semiconductor 最后,直接利用csa - pani濾液在導電玻璃上成膜做成器件,并對器件的性能進行了分析,這對于聚苯胺在在光電器件中應用具有指導意義。
英文解釋
a semiconductor in which electrical conduction is due chiefly to the movement of electrons